Dislocation scattering effects on electron mobility in InAsSb
作者： R. J. Egan , V. W. L. Chin , T. L. Tansley
DOI: 10.1063/1.356244
关键词: Scattering 、 Materials science 、 Electrical resistivity and conductivity 、 Electron mobility 、 Grain boundary 、 Ternary operation 、 Dislocation 、 Condensed matter physics 、 Lattice (order) 、 Electron scattering
摘要: … to determine the net mobility in InAs, InSb,and InAsSb from the … The compositional dependence of mobility is illustrated in Fig. … Carrier compensation reduces the mobility calculated for …
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