Structural, optical, and electrical properties of bulk single crystals of InAsxSb(1−x) grown by rotatory Bridgman method
作者： V. K. Dixit , Bhavtosh Bansal , V. Venkataraman , H. L. Bhat , G. N. Subbanna
DOI: 10.1063/1.1504163
关键词: Materials science 、 Crystal structure 、 Analytical chemistry 、 Crystallinity 、 Band gap 、 Crystallography 、 Electron diffraction 、 Electron mobility 、 X-ray crystallography 、 Infrared spectroscopy 、 Spectral line
摘要: Radially-homogeneous and single-phase InAsxSb(1−x) crystals, up to 5.0 at. % As concentration, have been grown using the rotatory Bridgman method. Single crystallinity has confirmed by x-ray electron diffraction studies. Infrared transmission spectra show a continuous decrease in optical energy gap with increase of arsenic content InSb. The measured values mobility carrier density at room temperature (for x=.05) are 5.6×104 cm2/V s 2.04×1016 cm−3, respectively.
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