Studies on high resolution x-ray diffraction, optical and transport properties of InAsxSb1−x∕GaAs (x⩽0.06) heterostructure grown using liquid phase epitaxy
作者： V. K. Dixit , Bhavtosh Bansal , V. Venkataraman , H. L. Bhat , K. S. Chandrasekharan
DOI: 10.1063/1.1784620
关键词: Materials science 、 Absorption spectroscopy 、 X-ray crystallography 、 Gallium arsenide 、 Analytical chemistry 、 Epitaxy 、 Band gap 、 Substrate (electronics) 、 Heterojunction 、 Diffraction
摘要: The growth of InAsxSb1−x∕GaAs (x⩽0.06) heterostructures has been achieved using liquid phase epitaxy. High resolution x-ray diffraction studies reveal that the films are single crystalline and structurally coherent with substrate. It is also inferred from these measurements in-plane out-of-plane strain arising out mismatched epitaxy almost completely relaxed, leading to a high dislocation density. room temperature energy gap measured be 0.13eV for InAs0.06Sb0.94∕GaAs. Temperature dependence studied between 93 433K through absorption spectra. dependent Hall mobility carried 10 370K on samples discussed.
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