High-quality InP nanoneedles grown on silicon
作者： Connie J. Chang-Hasnain
DOI: 10.1063/1.4775377
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摘要: In this letter, we report the growth of self-assembled, catalyst-free InP nanoneedles on Si substrate by low-temperature metal-organic chemical vapor deposition. With a characteristic core-shell mode, nanostructure size is scalable with time, and InP/InGaAs/InP double-heterostructure demonstrated. Single crystalline wurtzite essentially free stacking faults polytypism are achieved. The internal quantum efficiency as-grown unpassivated can reach as high 15% at room temperature. Laser oscillation realized from single nanoneedle under optical pump. These promising results reveal potential integrating optoelectronic devices traditional silicon.
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Satoshi Watanabe, Norihide Yamada, Masakazu Nagashima, Yusuke Ueki, Chiharu Sasaki, Yoichi Yamada, Tsunemasa Taguchi, Kazuyuki Tadatomo, Hiroaki Okagawa, Hiromitsu Kudo, Internal quantum efficiency of highly-efficient InxGa1−xN-based near-ultraviolet light-emitting diodes Applied Physics Letters. ,vol. 83, pp. 4906- 4908 ,(2003) , 10.1063/1.1633672
C Patrik T Svensson, Thomas Mårtensson, Johanna Trägårdh, Christina Larsson, Michael Rask, Dan Hessman, Lars Samuelson, Jonas Ohlsson, Monolithic GaAs/InGaP nanowire light emitting diodes on silicon Nanotechnology. ,vol. 19, pp. 305201- ,(2008) , 10.1088/0957-4484/19/30/305201
Linus C. Chuang, Michael Moewe, Shanna Crankshaw, Connie Chang-Hasnain, Optical properties of InP nanowires on Si substrates with varied synthesis parameters Applied Physics Letters. ,vol. 92, pp. 013121- ,(2008) , 10.1063/1.2832643
X Ren, H Huang, V G Dubrovskii, N V Sibirev, M V Nazarenko, A D Bolshakov, X Ye, Q Wang, Y Huang, X Zhang, J Guo, X Liu, Experimental and theoretical investigations on the phase purity of GaAs zincblende nanowires Semiconductor Science and Technology. ,vol. 26, pp. 014034- ,(2011) , 10.1088/0268-1242/26/1/014034
Toru Akiyama, Kosuke Sano, Kohji Nakamura, Tomonori Ito, An Empirical Potential Approach to Wurtzite-Zinc-Blende Polytypism in Group III-V Semiconductor Nanowires Japanese Journal of Applied Physics. ,vol. 45, pp. L275- L278 ,(2006) , 10.1143/JJAP.45.L275
G. E. Cirlin, V. G. Dubrovskii, I. P. Soshnikov, N. V. Sibirev, Yu. B. Samsonenko, A. D. Bouravleuv, J. C. Harmand, F. Glas, Critical diameters and temperature domains for MBE growth of III–V nanowires on lattice mismatched substrates Physica Status Solidi-rapid Research Letters. ,vol. 3, pp. 112- 114 ,(2009) , 10.1002/PSSR.200903057
Frank Glas, Jean-Christophe Harmand, Gilles Patriarche, Why does wurtzite form in nanowires of III-V zinc blende semiconductors? Physical Review Letters. ,vol. 99, pp. 146101- ,(2007) , 10.1103/PHYSREVLETT.99.146101
S Paiman, Q Gao, H H Tan, C Jagadish, K Pemasiri, M Montazeri, H E Jackson, L M Smith, J M Yarrison-Rice, X Zhang, J Zou, The effect of V/III ratio and catalyst particle size on the crystal structure and optical properties of InP nanowires. Nanotechnology. ,vol. 20, pp. 225606- 225606 ,(2009) , 10.1088/0957-4484/20/22/225606
Vladimir G. Dubrovskii, Maxim V. Nazarenko, Linus C. Chuang, Wai Son Ko, Kar Wei Ng, Connie Chang-Hasnain, Growth kinetics of GaAs nanoneedles on silicon and sapphire substrates Applied Physics Letters. ,vol. 98, pp. 153113- ,(2011) , 10.1063/1.3575556
Roger Chen, Thai-Truong D. Tran, Kar Wei Ng, Wai Son Ko, Linus C. Chuang, Forrest G. Sedgwick, Connie Chang-Hasnain, Nanolasers grown on silicon Nature Photonics. ,vol. 5, pp. 170- 175 ,(2011) , 10.1038/NPHOTON.2010.315