作者: Calvin F. Quate , Marco Tortonese
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摘要: A nitride cantilever is formed with an integral conical silicon tip at the free end thereof. top layer of dioxide patterned into a mask on doped or epitaxial in substrate. Photoresist spun substrate and etched to define pattern positioned be near subsequently formed. bottom then masking aperture layer. The anisotropically through etch stops Alternatively, electrochemical etching done by applying electric potential across P-N junction between appropriately-doped This releases from anisotropic preferentially etches all crystal planes except (111) leave base which extends surface as cantilever. dry form away while helps pointed microfabricated includes (100) having oblique side. over side outwardly one fixed end. On single-crystal sharp upwardly.