On the scalability of doped hafnia thin films
作者： C. Adelmann , T. Schram , S.-A. Chew , J. C. Woicik , S. Brizzi
DOI: 10.1063/1.4870075
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摘要: The scaling behavior of Gd- and Al-doped HfO2 films as gate dielectrics in metal-oxide-semiconductor (MOS) capacitors was studied. For equivalent oxide thicknesses (EOTs) the range 10 A, crystallized Gd:HfO2 showed higher leakage current densities than Al:HfO2, with undoped between. Ultimately, scalability Al:HfO2 limited by ability to crystallize at a given thermal budget. As result, for post-deposition annealing 800 °C, EOT based MOS ∼8 A. However, such an EOT, were reduced about 100× respect HfO2. This demonstrates high potential low-standby-power devices.
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