Method of correcting photomask patterns
作者： Shih-Lung Tsai
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摘要: A method of predicting photoresist patterns defined by a plurality photomask is described. The measurement data on that are arranged similar to the provided. physical optical kernel and mathematical load as part Gaussian distribution function or other combined including optimal values parameters determined fitting experiment with simulation based graphic kernels. Photoresist simulated patterns, kernel, determined.
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