作者: Salih Yılmaz , İsmail Polat , Murat Tomakin , Tayfur Küçükömeroğlu , SB Töreli
DOI: 10.1007/S00339-018-1922-9
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摘要: Virgin and Sm-doped CdS thin films were prepared by spray pyrolysis route on glass substrates. The influences of Sm-doping amount structural, topographical, optical electrical properties examined. It was found from X-ray diffraction data that virgin 1 2 at.% samples grew along (002) plane whereas the preferred orientation changed to (101) starting Sm doping 3 at.%. Morphological investigation showed even though specimen had irregular shaped grains, substantially modified surface topography films. A maximum transmittance attained for 4 at.% sample. After Sm-doping, a slight increase observed in band gap value room temperature photoluminescence compared CdS, intrinsic defect population reduced, meaning more stoichiometric formed. From measurements, it determined 1 at.% exhibited best properties, i.e., carrier density minimum resistivity. Based all data, could be pronounced displayed optimum characteristics reached