摘要: In the ternary semimagnetic compound Hg1-xFexSe some of Hg ions are statistically substituted by Fe ions. The most interesting features this material related to donor properties ion, whose energy level lies about 210 meV above band edge degenerate with quasi-free conduction states for sufficiently large x>or=0.0003 Fermi gets pinned level. mixed-valence regime a multitude phenomena observed: pronounced reduction microscopic scattering rate as expressed in mobility and Dingle temperature, fluctuations between delocalized localized giving rise three-dimensional analogue quantum Hall effect, spin fluctuations. These effects demonstrated data from numerous magnetospectroscopy experiments (transport, magnetization, IR FIR spectroscopy) DC magnetic fields up 18 T pulsed 100 T. magneto-optical spectra characteristically structured nonlocal interaction electromagnetic radiation charge carriers. Different theoretical approaches ranging an effective Wigner condensation over short-range correlation discussed relation experimental data. Due scattering, HgSe(Fe) proves be ideal matrix study behaviour different paramagnetic substitutes quaternary Hg1-x-yFexMnySe. Particular attention is given possible quasi two-dimensional modifications compounds heterostructures superlattices.
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sci-hub.se 参考文章(14)
M von Ortenberg, N Miura, W Dobrowolski, Hg1-xMnxSe:Fe in high magnetic fields Semiconductor Science and Technology. ,vol. 5, ,(1990) , 10.1088/0268-1242/5/3S/060
M Razeghi, F Omnes, M Defour, P Maurel, P Bove, Y J Chan, D Pavlidis, The first fabrication of n- and p-type Ga0.49In0.51P/Ga(In)As lattice matched and strained HIGFET structures grown by MOCVD Semiconductor Science and Technology. ,vol. 5, pp. 274- 277 ,(1990) , 10.1088/0268-1242/5/3/016
L. M. Bliek, G. Landwehr, De Haas - Van Alphen and Shubnikov - De Haas Effect in n-HgSe in Strong Magnetic Fields physica status solidi (b). ,vol. 31, pp. 115- 120 ,(1969) , 10.1002/PSSB.19690310113
J. Mycielski, Formation of a superlattice of ionized resonant donors or acceptors in semiconductors Solid State Communications. ,vol. 60, pp. 165- 168 ,(1986) , 10.1016/0038-1098(86)90552-1
I. I. Kuleev, I. I. Lyapilin, V. V. Karyagin, Transport Phenomena in Mixed-Valence Zero-Gap Semimagnetic HgFeSe Semiconductors physica status solidi (b). ,vol. 163, pp. 449- 462 ,(1991) , 10.1002/PSSB.2221630214
K. Kumazaki, E. Matsushima, A. Odajima, Point defects and non‐stoichiometry in HgSe Physica Status Solidi (a). ,vol. 37, pp. 579- 589 ,(1976) , 10.1002/PSSA.2210370229
Z. Wilamowski, K. Świa̧tek, T. Dietl, J. Kossut, Resonant states in semiconductors: A quantitative study of HgSe:Fe Solid State Communications. ,vol. 74, pp. 833- 837 ,(1990) , 10.1016/0038-1098(90)90945-8
Z. Wilamowski, A. Mycielski, W. Jantsch, G. Hendorfer, Spin dynamics in the mixed-valence compound HgSe:Fe. Physical Review B. ,vol. 38, pp. 3621- 3624 ,(1988) , 10.1103/PHYSREVB.38.3621
F. P. Missell, M. S. Dresselhaus, Study of the Optical Shubnikov-de Haas Effect Physical Review B. ,vol. 5, pp. 1364- 1382 ,(1972) , 10.1103/PHYSREVB.5.1364
O. Portugall, L. Van Bockstal, M. von Ortenberg, F. Herlach, W. Dobrowolski, Non-resonant optical spectroscopy on Hg(Fe)Se Physica B: Condensed Matter. ,vol. 177, pp. 441- 445 ,(1992) , 10.1016/0921-4526(92)90146-J