作者: J. Mycielski
DOI: 10.1016/0038-1098(86)90552-1
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摘要: Abstract In a semiconductor with high concentration of resonant donor states in the conduction band or acceptor valence band, Fermi level is pinned to state and only some donors (or acceptors) are ionized. Due (screened) Coulomb interaction ionized centers, there occurs an ordering space these centers (made possible by presence neutral centers), even form “crystallization”. It has dramatic effect on scattering free carriers. We compare predictions recent data Hg 1− x Fe Se.