Existence of a Gap in the Electronic Density of States of a Tetrahedrally Bonded Solid of Arbitrary Structure

摘要: Rigorous bounds for the density of electronic states are given an idealized model a group-IV semiconductor based on tight-binding method. These include inner which define minimum gap in states. The importance this development lies its independence periodicity. It applies not only to crystalline structures made up tetrahedral bonds but also random network recent studies have suggested amorphous Si and Ge.