Inductively and multi-capacitively coupled plasma reactor
作者： Diana Xiaobing Ma , Yan Ye , Gerald Zheyao Yin , Hiroji Hanawa
DOI:
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摘要: The invention is embodied in a plasma reactor for processing semiconductor wafer (61), the having pair of parallel capacitive electrodes (60,62) at ceiling (54) and base (56) chamber (50), respectively, each capacitively coupling RF power into (50) accordance with certain phase relationship between during (61) ease ignition precise control ion energy process reproducibility, an inductive coil (74) wound around portion inductively independent density. Preferably, order to minimize number sources (72) while providing control, includes splitting separately provide from common source or (74).
google.ch 参考文章(13)
Roland Gesche, Stefan Locher, Circuit for adjusting the impedance of a plasma section to a high-frequency generator ,(1989)
Stephen E. Savas, A low frequency inductive rf plasma reactor ,(1991)
Roland Gesche, Karl-Heinz Kretschmer, Device for the generation of a plasma ,(1990)
Allen Zhao, Hiroji Hanawa, Philip Salzman, Peter Loewenhardt, Gerald Yin, Diana Xiabing Ma, RF plasma reactor with hybrid conductor and multi-radius dome ceiling ,(1997)
John H. Keller, Dennis K. Coultas, Michael S. Barnes, John G. Forster, Optimized helical resonator for plasma processing ,(1992)
Derek R. San Jose Witty, Fred C. Fremont Redeker, Turgut Cupertino Sahin, Romuald Cupertino Nowak, Timothy Cupertino Dyer, Shijian San Jose Li, A method of operating a high density plasma CVD reactor with combined inductive and capacitive coupling ,(1995)
John Ogle, Gerald Z. Yin, Split-phase driver for plasma etch system ,(1989)
Kevin Fairbairn, Romuald Nowak, High density plasma CVD and etching reactor ,(1994)
Bethenod Joseph, Supply of electric discharge tubes excited inductively ,(1938)
Hiroji Hanawa, Ma Diana Xiaobing, Gerald Z Yin, Etch processing and plasma reactor for performing same ,(1995)