Design Space Exploration of Hysteresis-Free HfZrO x -Based Negative Capacitance FETs
作者： Ankit Sharma , Kaushik Roy
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摘要: … In the following sections, we use this as a reference ferroelectric in the gate-stack of the NCFET. Also, for each device architecture, ie bulk-MOSFET, FDSOI-FET and FinFET, we choose …
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Sayeef Salahuddin, Supriyo Datta, Use of Negative Capacitance to Provide Voltage Amplification for Low Power Nanoscale Devices Nano Letters. ,vol. 8, pp. 405- 410 ,(2008) , 10.1021/NL071804G
Q. Liu, M. Vinet, J. Gimbert, N. Loubet, R. Wacquez, L. Grenouillet, Y. Le Tiec, A. Khakifirooz, T. Nagumo, K. Cheng, H. Kothari, D. Chanemougame, F. Chafik, S. Guillaumet, J. Kuss, F. Allibert, G. Tsutsui, J. Li, P. Morin, S. Mehta, R. Johnson, L. F. Edge, S. Ponoth, T. Levin, S. Kanakasabapathy, B. Haran, H. Bu, J.-L. Bataillon, O. Weber, O. Faynot, E. Josse, M. Haond, W. Kleemeier, M. Khare, T. Skotnicki, S. Luning, B. Doris, M. Celik, R. Sampson, High performance UTBB FDSOI devices featuring 20nm gate length for 14nm node and beyond international electron devices meeting. ,(2013) , 10.1109/IEDM.2013.6724592
A Starkov, I Starkov, None, Asymptotic Description of the Time and Temperature Hysteresis in the Framework of Landau-Khalatnikov Equation Ferroelectrics. ,vol. 461, pp. 50- 60 ,(2014) , 10.1080/00150193.2014.889544
Takao Shimizu, Tatsuhiko Yokouchi, Takahisa Shiraishi, Takahiro Oikawa, P. S. Sankara Rama Krishnan, Hioshi Funakubo, Study on the effect of heat treatment conditions on metalorganic-chemical-vapor-deposited ferroelectric Hf0.5Zr0.5O2 thin film on Ir electrode Japanese Journal of Applied Physics. ,vol. 53, ,(2014) , 10.7567/JJAP.53.09PA04
A. Arun Goud, Sumeet Kumar Gupta, Sri Harsha Choday, Kaushik Roy, Atomistic tight-binding based evaluation of impact of gate underlap on source to drain tunneling in 5 nm gate length Si FinFETs device research conference. pp. 51- 52 ,(2013) , 10.1109/DRC.2013.6633788
Johannes Müller, Tim S. Böscke, Uwe Schröder, Stefan Mueller, Dennis Bräuhaus, Ulrich Böttger, Lothar Frey, Thomas Mikolajick, Ferroelectricity in Simple Binary ZrO2 and HfO2 Nano Letters. ,vol. 12, pp. 4318- 4323 ,(2012) , 10.1021/NL302049K
Hiroyuki Ota, Tsutomu Ikegami, Junichi Hattori, Koichi Fukuda, Shinji Migita, Akira Toriumi, Fully coupled 3-D device simulation of negative capacitance FinFETs for sub 10 nm integration international electron devices meeting. ,(2016) , 10.1109/IEDM.2016.7838403
M. H. Lee, S.-T. Fan, C.-H. Tang, P.-G. Chen, Y.-C. Chou, H.-H. Chen, J.-Y. Kuo, M.-J. Xie, S.-N. Liu, M.-H. Liao, C.-A. Jong, K.-S. Li, M.-C. Chen, C. W. Liu, Physical thickness 1.x nm ferroelectric HfZrOx negative capacitance FETs international electron devices meeting. ,(2016) , 10.1109/IEDM.2016.7838400
Eunah Ko, Jae Woo Lee, Changhwan Shin, Negative Capacitance FinFET With Sub-20-mV/decade Subthreshold Slope and Minimal Hysteresis of 0.48 V IEEE Electron Device Letters. ,vol. 38, pp. 418- 421 ,(2017) , 10.1109/LED.2017.2672967
Tommaso Rollo, David Esseni, Energy Minimization and Kirchhoff’s Laws in Negative Capacitance Ferroelectric Capacitors and MOSFETs IEEE Electron Device Letters. ,vol. 38, pp. 814- 817 ,(2017) , 10.1109/LED.2017.2691002