Magnetic exchange coupled MTJ free layer having low switching current and high data retention
作者： Daniel C. Worledge , Jeong-Heon Park , Guohan Hu
DOI:
关键词:
摘要: Embodiments of the invention are directed to a magnetic tunnel junction (MTJ) storage element that includes reference layer, barrier and free layer on an opposite side from layer. The has fixed magnetization direction. first region, second region third region. is formed material configured magnetically couple having predetermined moment, moment. moment lower
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