Effects of the etchmask properties on the anisotropy ratio in anisotropic etching of silicon in aqueous KOH
作者： H Schröder , E Obermeier , A Steckenborn
DOI: 10.1088/0960-1317/8/2/014
关键词:
摘要: … stress induced in the silicon substrate by an LPCVD-Si3N4 … It is shown that the rise of the mechanical stress at the edges … in the highly stressed LPCVDSi3N4 layer during corner …
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