Bonding type semiconductor substrate, semiconductor light emitting element, and preparation process thereof
作者： Shunji Yoshitake , Yasuhiko Akaike , Kazuyoshi Furukawa
DOI:
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摘要: The process comprises a step of growing epitaxially mixed crystals compound semiconductor represented by the composition formula Inx(Ga1-yAly)1-xP on GaAs substrate 12 to form an epi-wafer having n-type cladding layer 14 (0.45
google.at 参考文章(29)
Kimimichi Miyazawa, Kozo Kamata, Kazumi Ohata, Method for adsorbing or including material to or into starch ,(1985)
Kazuyoshi Furukawa, Masanobu Ogino, Koichi Kishi, Semiconductor memory device and manufacturing method therefor ,(1994)
Endo Nobuhiro, Hamaguchi Tsuneo, Semiconductor device and method of manufacturing the same ,(1989)
Shiro Satoh, Semiconductor light emitting element ,(1994)
Tsuneo Ogura, Katsujiro Tanzawa, Kazuyoshi Furukawa, Akio Nakagawa, Dielectrically isolated substrate with isolated high and low breakdown voltage elements ,(1991)
O Patent Division Furukawa, O Patent Division Yamaguchi, O Patent Division Nakagawa, Yoshihiro C, O Patent Division Fukuda, O Patent Division Watanabe, Katsujiro C, Kazuyoshi C, Kiminori C, Kiyoshi C, Akio C, O Patent Division Tanzawa, Dielectrically isolated semiconductor substrate ,(1989)
Tsuneo Ogura, Katsujiro Tanzawa, Kazuyoshi Furukawa, Akio Nakagawa, Process of making a semiconductor device using a silicon-on-insulator substrate ,(1994)
Yasunori Ohkubo, Yoshihiro Miyazawa, Method and apparatus for wafer bonding ,(1994)
Fred A. Kish, John Uebbing, Virginia M. Robbins, Dennis C. Defever, Frank M. Steranka, Wafer bonding of light emitting diode layers ,(1994)