System and method for pre-gate cleaning of substrates
作者： Ismail Kashkoush , Alan Walter , Zhi Lewis Liu , Richard Novak
DOI:
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摘要: A system and method for cleaning semiconductor wafers wherein the use of SCI SC2 is eliminated replaced by DIO3 dilute chemistries. In one aspect, invention a comprising: (a) supporting in process chamber at least wafer having silicon foundation with silicon-dioxide layer pre-gate structure; (b) applying an aqueous solution hydrofluoric acid deionized (DI) water to remove dioxide form gate; (c) ozonated (DIO3) particles from gate passivate foundation; (d) hydrochloric DI any that may have formed application metal contaminants; (e) grow new on gate.
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