Nanometer scale electronic reconstruction at the interface between LaVO3 and LaVO4.

作者: L. Fitting Kourkoutis , Y. Hotta , T. Susaki , H. Y. Hwang , D. A. Muller

DOI: 10.1103/PHYSREVLETT.97.256803

关键词:

摘要: Electrons at interfaces, driven to minimize their free energy, are distributed differently than in bulk. This can be dramatic interfaces involving heterovalent compounds. Here we profile an abrupt interface between V $3{d}^{2}$ ${\mathrm{LaVO}}_{3}$ and $3{d}^{0}$ ${\mathrm{LaVO}}_{4}$ using electron energy loss spectroscopy. Although no bulk phase of ${\mathrm{LaVO}}_{x}$ with a $3{d}^{1}$ configuration exists, find nanometer-wide region the ${\mathrm{LaVO}}_{3}/{\mathrm{LaVO}}_{4}$ interface, rather mixture $3{d}^{2}$. The two-dimensional sheet electrons is prototypical electronic reconstruction competing ground states.

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