Bulk and interface imperfections in semiconductors

摘要: Abstract Charges trapped at imperfection centers can be detected by observing the slow time dependences of high-frequency small-signal capacitance and current a space charge region which is depleted carriers. Detection as low 1010 to 1011 electron charges per cm3 in volume 10−3 cm × cm2, or 105 10 charges, achieved. This technique has been used study temperature, electric field photon energy thermal, optical Auger-impact emission capture rates electrons holes impurity defect bulk surface regions semiconductors, well generation, annealing diffusion kinetics these centers. It also monitor silicon integrated circuit fabrication processes. The principle this described experimental examples are given illustrate applications technique.