An improved model for substrate in RF SOI MOSFET varactor
作者： Wenjun Li , Xiaochuan Chen , Jun Liu
DOI: 10.1002/JNM.2179
关键词:
摘要: Summary A simple small-signal equivalent circuit based on the physical structure of silicon-on-insulator metal–oxide–semiconductor field-effect transistor varactor for substrate loss effects is presented in this paper. The model includes a BSIMSOI charge formulation and geometry process parameter parasitic modeling. Key device performances capacitance quality factor are validated over voltage, frequency, geometry. model, implemented Verilog-A, provides robust accurate radiofrequency simulation varactor. Copyright © 2016 John Wiley & Sons, Ltd.
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