作者: Giovanni Crupi , Dominique M.M.-P. Schreurs , Morin Dehan , Dongping Xiao , Alina Caddemi
DOI: 10.1016/J.SSE.2007.09.009
关键词:
摘要: In this work we report on the small and large signal behaviour of advanced nMOS varactors fabricated in FinFET technology. This is first paper showing network analyzer (LSNA) measurements performed varactors. These nonlinear are modeled with a lookup table based model that constructed using an accurate multi-bias equivalent circuit. The validity extracted models verified through very good agreement between simulations.