Analytical extraction of small and large signal models for FinFET varactors

作者: Giovanni Crupi , Dominique M.M.-P. Schreurs , Morin Dehan , Dongping Xiao , Alina Caddemi

DOI: 10.1016/J.SSE.2007.09.009

关键词:

摘要: In this work we report on the small and large signal behaviour of advanced nMOS varactors fabricated in FinFET technology. This is first paper showing network analyzer (LSNA) measurements performed varactors. These nonlinear are modeled with a lookup table based model that constructed using an accurate multi-bias equivalent circuit. The validity extracted models verified through very good agreement between simulations.

参考文章(13)
A. Bracale, V. Ferlet-Cavrois, N. Fel, D. Pasquet, J. L. Gautier, J. L. Pelloie, J. du Port de Poncharra, A New Approach for SOI Devices Small-Signal Parameters Extraction Analog Integrated Circuits and Signal Processing. ,vol. 25, pp. 157- 169 ,(2000) , 10.1023/A:1008332732738
M. Dehan, B. Parvais, V. Subramanian, C. Gustin, J. Loo, A. Mercha, S. Decoutere, Characterization, modeling, and optimization of FinFET MOS varactors topical meeting on silicon monolithic integrated circuits in rf systems. pp. 28- 31 ,(2007) , 10.1109/SMIC.2007.322761
D. Lederer, V. Kilchytska, T. Rudenko, N. Collaert, D. Flandre, A. Dixit, K. De Meyer, J.-P. Raskin, FinFET analogue characterization from DC to 110 GHz Solid-state Electronics. ,vol. 49, pp. 1488- 1496 ,(2005) , 10.1016/J.SSE.2005.07.011
Giovanni Crupi, DMMP Schreurs, B Parvais, Alina Caddemi, A Mercha, S Decoutere, None, Scalable and multibias high frequency modeling of multi-fin FETs Solid-state Electronics. ,vol. 50, pp. 1780- 1786 ,(2006) , 10.1016/J.SSE.2006.09.006
D. Lederer, B. Parvais, A. Mercha, N. Collaert, M. Jurczak, J.-P. Raskin, S. Decoutere, Dependence of finFET RF performance on fin width topical meeting on silicon monolithic integrated circuits in rf systems. pp. 8- 11 ,(2006) , 10.1109/SMIC.2005.1587887
Seong-Sik Song, Hyungcheol Shin, An RF model of the accumulation-mode MOS varactor valid in both accumulation and depletion regions IEEE Transactions on Electron Devices. ,vol. 50, pp. 1997- 1999 ,(2003) , 10.1109/TED.2003.815599
J. Victory, Z. Yan, G. Gildenblat, C. McAndrew, J. Zheng, A physically based, scalable MOS varactor model and extraction methodology for RF applications IEEE Transactions on Electron Devices. ,vol. 52, pp. 1343- 1353 ,(2005) , 10.1109/TED.2005.850693
Vaidy Subramanian, Bertrand Parvais, Jonathan Borremans, Abdelkarim Mercha, Dimitri Linten, Piet Wambacq, Josine Loo, Morin Dehan, Cedric Gustin, Nadine Collaert, Stefan Kubicek, Robert Lander, Jacob Hooker, Florence Cubaynes, Stephane Donnay, Malgorzata Jurczak, Guido Groeseneken, Willy Sansen, Stefaan Decoutere, Planar Bulk MOSFET s Versus FinFETs: An Analog/RF Perspective IEEE Transactions on Electron Devices. ,vol. 53, pp. 3071- 3079 ,(2006) , 10.1109/TED.2006.885649
Keqiang Shen, F.P.S. Hui, W.M.Y. Wong, Zhiheng Chen, J. Lau, P.C.H. Chan, P.K. Ko, A three-terminal SOI gated varactor for RF applications IEEE Transactions on Electron Devices. ,vol. 48, pp. 289- 293 ,(2001) , 10.1109/16.902729
B. Parvais, P. Delatte, H. Matsuhashi, F. Ichikawa, P. Simon, D. Schreurs, D. Flandre, J.-P. Raskin, Small- and large-signal RF characterization of fully-depleted accumulation-mode varactors for low-voltage LC-VCO SOI design international soi conference. pp. 168- 170 ,(2004) , 10.1109/SOI.2004.1391602