Microwave neural modeling for silicon FinFET varactors
作者： Zlatica Marinković , Giovanni Crupi , Dominique M. M.-P. Schreurs , Alina Caddemi , Vera Marković
DOI: 10.1002/JNM.1926
关键词:
摘要: The FinFET architecture is currently attracting increasing attention to enable further downscaling of the complementary metal-oxide-semiconductor CMOS technology. interest towards technology for microwave applications not only limited transistors but extended also varactors. Therefore, there a need efficient and accurate varactor models in high-frequency range. In this paper, an artificial neural network-based behavioral model varactors fabricated advanced proposed. developed verified by comparing measured simulated scattering parameters up 50GHz. extracted can reproduce very well behavior tested before after applying de-embedding procedure based on open dummy structure. Copyright © 2014 John Wiley & Sons, Ltd.
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