Predicting mask distortion, clogging and pattern transfer for stencil lithography

摘要: One of the ultimate tasks for stencil lithography is ability to fabricate arrays structures with controlled dimensions on nanometer scale precisely positioned a suitable surface. The race shrink feature sizes requires limits conventional be extended high-throughput, low cost, reliable and well-controlled processes which stencilling promising candidate nanoscale applications. Identifying, predicting overcoming issues accompanying nanostencil critical successful timely development this technique wide range potential This paper addresses phenomena associated nanopatterning presents results modelling simulation studies deleterious effects mask distortion clogging during pattern transfer. It shown that degrading stress-induced deformation stencils can dealt via optimal design corrugation in turn reduce significantly improves definition. Modelling are validated by comparison experiment. used define practical rules fabrication stable large area (''full scale'') purpose-designed membranes. accurate phenomenon combined gradually evolving deformation, also presented paper, prediction distortion, calculate maximum thickness deposited layer and/or lifetime.