Self-testable CMOS thermopile-based infrared imager

摘要: This paper describes a CMOS-compatible self-testable uncooled InfraRed (IR) imager that can be used in multiple applications such as overheating detection, night vision, and earth tracking for satellite positioning. The consists of an array thermal pixels sense infrared radiation. Each pixel is implemented front-side bulk micromachined membrane suspended by four arms, each arm containing thermopile made Poly/Al thermocouples. has self-test function activated off-line the field validation maintenance purposes, with on-chip test signal generation requires only slight modifications design. takes about 15 ms. area overhead required electronics does not imply any reduction fill factor, since fits silicon boundary. However, additional circuitry contributes to small increase conductance due wiring heating resistor over arms. capability allows production standard equipment, without need special sources associated optical equipment. A prototype 8 X currently fabrication approach. In this prototype, occupies 200 micrometer2, size 90 micrometer2 (fill factor 0.2). Simulation results indicate 22.6 (mu) W/K, giving responsivity 138 V/W, thermocouple Seebeck coefficient been measured at 248 V/K 0.6 micrometer CMOS technology used. noise equivalent power (considering Johnson thermopile) calculated 0.18 nW.H-1/2 detectivity 5.03 107 cm.Hz1/2.W-1, line current state-of-the-art. Since may measure irradiation intensities below 1(mu) W, output voltage much smaller than 1 mV, analog front-end incorporated on chip uses modulation correlated-double-sampling reduce amplifier offset floor.© (2001) COPYRIGHT SPIE--The International Society Optical Engineering. Downloading abstract permitted personal use only.