Why optical lithography will live forever

作者: Timothy A. Brunner

DOI: 10.1116/1.1619954

关键词:

摘要: A lithographic process capable of manufacturing state the art chips faces many difficult challenges. Not only must resolve minimum feature size but overlay errors be held to tight tolerances, exquisitely complex patterns printed with high yield, and overall cost acceptable. Achieving acceptable chip using an expensive exposure tool is strongly linked throughput, this in turn resist processes sensitivity. In recent years, chemically amplified have dominated state-of-the-art production because their resolution excellent This article will consider limitations for lithography, both limits itself process. Among most important considerations tradeoff between sensitivity resolution. Fundamental reasons underlying success optical lithography integrated circuits described. These illuminate challenges opportunities future methods.

参考文章(19)
J. A. Hoffnagle, W. D. Hinsberg, M. I. Sanchez, F. A. Houle, Method of measuring the spatial resolution of a photoresist Optics Letters. ,vol. 27, pp. 1776- 1778 ,(2002) , 10.1364/OL.27.001776
H. Ito, Chemical amplification resists: history and development within IBM Ibm Journal of Research and Development. ,vol. 41, pp. 119- 130 ,(1997) , 10.1147/RD.441.0119
William D. Hinsberg, Frances A. Houle, Martha I. Sanchez, John A. Hoffnagle, Gregory M. Wallraff, David R. Medeiros, Gregg M. Gallatin, Jonathan L. Cobb, Extendibility of chemically amplified resists: another brick wall? Advances in Resist Technology and Processing XX. ,vol. 5039, pp. 1- 14 ,(2003) , 10.1117/12.487739
Burn J. Lin, Where Is The Lost Resolution 1986 Microlithography Conferences. ,vol. 0633, pp. 44- 50 ,(1986) , 10.1117/12.963701
Toshihiko Tanaka, Mitsuaki Morigami, Nobufumi Atoda, Mechanism of Resist Pattern Collapse during Development Process Japanese Journal of Applied Physics. ,vol. 32, pp. 6059- 6064 ,(1993) , 10.1143/JJAP.32.6059
P. Vettiger, Nanometer sidewall lithography by resist silylation Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. ,vol. 7, pp. 1756- 1759 ,(1989) , 10.1116/1.584452
Gordon E. Moore, Lithography and the future of Moore's law Electron-Beam, X-Ray, EUV, and Ion-Beam Submicrometer Lithographies for Manufacturing V. ,vol. 2437, pp. 2- 17 ,(1995) , 10.1117/12.209151
Steven J. Holmes, Toshiharu Furukawa, Mark C. Hakey, David V. Horak, Paul A. Rabidoux, K. Rex Chen, Wu-Song Huang, Mahmoud Khojasteh, Niranjan Patel, Edge lithography as a means of extending the limits of optical and nonoptical lithographic resolution Proceedings of SPIE, the International Society for Optical Engineering. ,vol. 3678, pp. 348- 357 ,(1999) , 10.1117/12.350218
Timothy A. Brunner, Allen H. Gabor, ChungHsi J. Wu, Nora Chen, High-NA swing curve effects 26th Annual International Symposium on Microlithography. ,vol. 4346, pp. 1050- 1057 ,(2001) , 10.1117/12.435726
Darı́o L. Goldfarb, Juan J. de Pablo, Paul F. Nealey, John P. Simons, Wayne M. Moreau, Marie Angelopoulos, Aqueous-based photoresist drying using supercritical carbon dioxide to prevent pattern collapse Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. ,vol. 18, pp. 3313- 3317 ,(2000) , 10.1116/1.1313582