作者: E Wieser , E Richter , R Groetzschel , A Mücklich , F Prokert
DOI: 10.1016/S0257-8972(98)00415-0
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摘要: Abstract Technical semi-hard aluminium (99.5 wt.% Al) was implanted with nickel at 200 keV (Timpl≤200 °C) and 1 MeV (Timpl≤50 °C). The chosen doses resulted in maximum concentrations of 22–32 at.% 20–45 at.% for implantation 1 MeV, respectively. as-implanted microstructure characterized by an essentially amorphous matrix nanocrystalline precipitates NiAl3 NiAl. size the order 5–10 nm. For formation NiAl observed all samples typical particle sizes also After only >30 at.%, but larger 40±20 nm. occurrence explained higher resistance against radiation damage compared NiAl3. By annealing 400 °C both sample series a buried continuous layer formed. metastable disappeared. Annealing 600 °C led to growth large grains dimensions up micrometre range. A significant wear reduction factor about 20 deep distribution obtained as well state high resulting >40 at.%.