作者: Tae Hyung Kim , Kyong Nam Kim , Anurag Kumar Mishra , Jin Seok Seo , Ho Boem Jeong
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摘要: The plasma characteristics of inductively coupled (ICP) sources operated with dual-frequency antennas frequencies 2 and 13.56 MHz were investigated compared a source single-frequency antenna at MHz. Improved such as higher density, lower potential, electron temperature observed the ICP owing to high absorbed power through driving frequency antenna. Also, variation ratios changed energy distribution. Therefore, when silicon was etched using CF4/Ar, maximum etching selectivity over photoresist could be rf ratio approximately 70% possibly due different gas dissociation for ratios, even though rate increased density. In addition, by instead antenna, uniformity also improved.