RECOMBINATION RATE SATURATION MECHANISMS AT OXIDIZED SURFACES OF HIGH-EFFICIENCY SILICON SOLAR CELLS
作者： S. J. Robinson , S. R. Wenham , P. P. Altermatt , A. G. Aberle , G. Heiser
DOI: 10.1063/1.359821
关键词:
摘要: Shoulders have been observed in the measured semilogarithmic current‐voltage (I–V) characteristics of high‐efficiency passivated emitter and rear locally diffused silicon (Si) solar cells. An improved understanding is given mechanism proposed to cause these nonideal I–V curves. It shown that this due electrostatic behavior free carriers at Si/SiO2 interface oxidized Si devices which adjacent oxide depleted (or some cases, inverted) equilibrium, results saturation surface recombination rate. Two‐dimensional numerical computer simulations are used investigate its effect on cell performance. In addition, provide a means estimating extent lateral conduction channel also contributes ohmic limitation occurs, however, current flows negligible comparison currents former mechanism.
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