作者: Aleksey E. Bolotnikov , Stephen Babalola , Giuseppe S. Camarda , Yonggang Cui , Stephen U. Egarievwe
关键词:
摘要: Both Te inclusions and point defects can trap the charge carriers generated by ionizing particles in CdZnTe (CZT) detectors. The amount of trapped is proportional to carriers' drift time be corrected electronically. In case inclusions, loss depends upon their random locations with respect electron cloud. Consequently, introduce fluctuations signals, which cannot easily corrected. this paper, we describe direct measurements cumulative effect its influence on response CZT detectors different thicknesses sizes concentrations inclusions. We also discuss a means partially correcting adverse effects.