Fundamental investigations on the spark plasma sintering/synthesis process: I. Effect of dc pulsing on reactivity
作者： W. Chen , U. Anselmi-Tamburini , J.E. Garay , J.R. Groza , Z.A. Munir
DOI: 10.1016/J.MSEA.2004.11.020
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摘要: Abstract The characteristics of pulsing patterns in the SPS process were investigated, and effect on reactivity between Si Mo was determined. Pulsing composed consecutive 3 ms peaks separated by a period no current. (voltage) increased magnitude with an increase “off” time relative to “on” time. RMS value current constant changes pattern, indicating that this is governing condition power dissipation thus temperature. effects layers investigated. direction had thickness product layer. More importantly, growth rate formed at 1070, 1170 1270 °C independent pulse range studied work.
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