作者: Ion N Mihailescu , Eniko Gyorgy , Mihai A Popescu , Sebastian M Csutak , Gheorghe Marin
DOI: 10.1117/1.600732
关键词:
摘要: We report the synthesis and deposition of Ti carbide thin lay- ers by multipulse excimer laser ablation targets in CH4 at low am- bient pressure (in microbar range). The layers deposited on single- crystalline Si wafers are characterized optical microscopy, scanning electron x-ray diffraction, photoelectron spectroscopy, spectroscopic ellipsometry. obtained rates range 0.2 to 0.3 A/pulse for a target-collector separation distance 12.5 mm. parameters were found be good agreement with predictions theoretical model based assumption adiabatic expansion plasma ambient gas. © 1996 Society Photo-Optical Instrumentation Engineers. Subject terms: ablation; titanium carbide; films; ellipsom- etry.