Memristive switching in Cu/Si/Pt cells and its improvement in vacuum environment

摘要: Abstract Memristive switching in materials attracts intensive attention due to its potential application for nonvolatile memories. The environmental effect on the stability is of crucial importance fabrication and performance a real memory devices. In this work, solid state electrochemical cell with Cu/Si/Pt sandwich structure has been investigated. shows forming-free gradual memristive behavior. atmosphere significant We suggest that Cu electrode oxidized by atmosphere, forming CuO x layer at Cu/Si interface. can be attributed redox reaction between Si layers an equilibrium oxygen exchange environment. By pre-fabricating during preparation, avoided degradation vacuum condition improved. These results provide fundamental insight into improvement devices close service condition.