Peculiarities of Pulsed Ion Implantation from a Laser Plasma Containing Multiply Charged Ions

摘要: A mathematical model describing the dynamics of a pulsed laser plasma with multiply charged ions, as well formation accelerated ion flow in an external magnetic field, is developed. Experimental studies and simulation by particle-in-cell method are used to determine role ions process implantation into silicon substrate from containing singly doubly titanium ions. The spreads between parallel-plate electrodes (Ti target Si substrate) along normal surface target. Ions high-voltage negative pulses applied substrate. It found that effectively participate when electric field very soon after action on application pulse amplitude 50 kV 0.5 μs leads energy close 100 keV. With increasing delay pulse, upper boundary spectrum implanted displaced towards lower energies. Comparison depth profiles distribution calculated results compared experimental shows developed here correctly describes high-energy component flow, which responsible for defect doping deep layers