Kinetic Monte Carlo studies of early surface morphology in diamond film growth by chemical vapor deposition of methyl radical.

摘要: We present results of off-lattice kinetic Monte Carlo simulations early stages low-pressure diamond film growth from a C[111] substrate via methyl radical and hydrogen vapor deposition. Interactions are governed by semiempirical interatomic potential energy function. Rates for surface chemisorption desorption that have been calculated Raff co-workers used to assign real time the steps. The rate-determining step is deposition or attempted radical. Between ${\mathrm{CH}}_{3}$ events, relaxed standard methods. During relaxation process C-C bonds may form break, diffusion occurs. study rate formation pair larger clusters chemisorbed carbon over 20-ms simulation, during which initial becomes covered small ledges begin form. This in accord with observed rates \textcopyright{} 1996 American Physical Society.