Deposition and characterization of ZnxCd1−xS thin films prepared by the dip technique

摘要: Abstract Zn x Cd 1− S (0≤ ≤1) thin films have been deposited by the dip technique on glass substrates. In this method, a clean substrate was dipped into an alcoholic solution of corresponding nitrates and thiourea then withdrawn vertically at controlled speed, finally baked in furnace. X-ray diffractometric study suggests that for zinc atomic fraction ≤0.6 prepared baking temperature 500°C are homogeneous with hexagonal (wurtzite) structure. Increase proportion starting is found to produce decrease lattice parameter. SEM studies reveal increase grain size up value 0.6. For >0.6, appear amorphous character, as no distinguishable peaks can be seen diffractograms. The micrographs also do not show any clearly defined grains over range. Values bandgap obtained from optical absorption measurements well spectral response photoconductivity good agreement each other vary monotonically 2.30 eV (CdS) 2.69 (Zn 0.6 0.4 S) range 0≤ ≤0.6.