All-optical modulation for semiconductor lasers by using three energy levels in n-doped quantum wells
作者： S. Noda , T. Yamashita , M. Ohya , Y. Muromoto , A. Sasaki
DOI: 10.1109/3.234416
关键词:
摘要: An all-optical modulation method for semiconductor lasers using three energy levels in n-doped quantum wells is demonstrated. The principle based on the third-order interaction between interband-and intersubband-resonant light quantum-well structure. demonstrated by a real-time single-shot experiment laser interband-resonant and CO/sub 2/ light. dependences of depth polarization wavelength indicate that achieved this principle. It pointed out thermal effect appears when power becomes strong. >
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