Pit formation on the Ge (1 0 0) surfaces by normal incident Si− ion implantation

摘要: Abstract We have observed micron size pit formation on Ge surface due to bombardment of 26 keV Si− ion at normal incidence in the fluence range 1 × 1018 and 7 × 1018 ions/cm2. Scanning electron microscopy (SEM) atomic force (AFM) are used follow evolution morphology. The pits various shapes, e.g., crescent-shaped, kidney-like or circular structures. two-field continuum model developed for small slope approximations can describe growth very beginning bombardment. late times (high fluence) be explained by gradient dependent erosion mechanisms primary beam as well secondary flux particles originating from steep slopes. Energy dispersive X-ray analysis attached SEM is employed obtain chemical information pitted surface. depletion Si bottom lower diffusivity Ge.