Grain-Size-Dependent Low-Temperature Electrical Resistivity of Polycrystalline Co2MnAl Heusler Alloy Thin Films

摘要: Low-temperature electrical resistivity of Co2MnAl Heusler alloy thin films prepared by DC magnetron sputtering technique has been investigated. After deposition films, they were annealed at 200–400 ∘C to control the crystal structure and atomic order between Co, Mn, Al sites. The ratio intensity (200) (220) XRD peaks increases with increasing annealing temperature. low-temperature dependence demonstrated that film magnetic ordering effected Co2MnAl. temperature for all samples exponential decrease when increases. However, 1000 ∗(1 /T) logarithmic variation not linear characteristic samples, also, dependency deposited agreed logarithmic, \(\rho (\mathrm {T})\propto {\ln }T\), behaviors. conductivity a relation square root These kinds behaviors have attributed grains/clusters disordering samples.