作者: Philippe F. Smet , Jo E. Van Haecke , Roland L. Van Meirhaeghe , Dirk Poelman
DOI: 10.1063/1.2012515
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摘要: BaAl2S4:Eu thin films were prepared from a multilayered BaS:Eu∕Al2S3 thin-film structure, deposited with electron-beam evaporation. Depending on the deposition and postdeposition annealing temperature, europium-doped BaAl2S4 can show both an orthorhombic more common cubic crystal structure. The lattice constants of are determined powder-diffraction data. photoluminescent properties powders compared. occurrence phases in is discussed terms substrate temperature. A temperature 600°C sufficient to obtain phase, at 900°C leads phase. phase formation investigated by studying crystallographic, optical, properties.