作者: Hamano Kuniyuki
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摘要: Provided is a thin-film transistor comprising low-temperature polysilicon having low off-current, excellent potential-holding characteristics, power usage, and high operating speed. Also provided are liquid-crystal display device using said method for manufacturing the transistor. The uses an inversely staggered structure with gate electrode, insulation film, channel region, source/drain electrodes formed on top of glass substrate. region comprises film a-Si:H that covers sides film.