Improvement of the thermal and chemical stability of Al doped ZnO films
作者： I. H. Kim , D. Y. Ku , J. H. Ko , D. Kim , K. S. Lee
DOI: 10.1007/S10832-006-8315-8
关键词:
摘要: To improve the stability of sputter-deposited ZnO:Al (AZO) films at high temperature above 300∘C, an amorphous Zn-Sn-O (ZTO) film was deposited on top AZO as protective layer by co-sputtering pure ZnO and SnO2 targets. Amorphous ZTO had resistivity in range from 10−2 to 10−3 Ωcm were stable up 400∘C. Heat treatments bare atmosphere 400∘C resulted a dramatic increase accompanied substantial decrease carrier concentration Hall mobility. The covered with showed remarkable improvement thermal for subsequent heat 200 well chemical weak acidic solution. X-ray photoelectron spectroscopy analysis that attained acting diffusion barrier oxygens and/or water vapors.
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