作者: Peter J.K. Paterson , P.H. Holloway , Y.E. Strausser
DOI: 10.1016/0378-5963(80)90005-7
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摘要: Abstract The use of implanted, inert-gas-atom Auger peaks for energy referencing on charging substrates has been investigated. Ar implanted into Cu, Au, BeO, Al 2 O 3 , SiO and Si N 4 was studied along with Xe Au . A linear relationship always found plots the an peak from any sample versus or peaks. However, in some cases, slope such deviated significantly unity. within ± 5% unity observed 15 out 19 plots. Thus shift due to 20 eV, can generally be fixed 1 eV using this technique.