Comments on the use of implanted Ar as a binding energy reference
作者： A.E. Hughes , B.A. Sexton
DOI: 10.1016/0368-2048(90)87080-8
关键词:
摘要: Abstract The binding energy of the Ar2p 3 2 level Ar implanted into insulating oxides has been determined via Au calibration. demonstrated to be constant at a 242.3 ± 0.1 eV for range including γ-Al2O3, ZrO2, SiO2 and Y2O3.
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