作者: Chee-Keong Tan , Jing Zhang , Xiao-Hang Li , Guangyu Liu , Benjamin O. Tayo
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摘要: The band structure of dilute-As GaNAs alloy with the As composition range from 0% to 12.5% is studied by using First-Principle density-functional calculation. Our analysis shows that exhibits direct gap properties. a 3.645 eV down 2.232 content varying 12.5%, which covers blue and green spectral regime. This finding indicates as potential candidate for photonic devices applications. bowing parameter 14.5 ±0.5 also obtained line fitting experimental data. effective masses electrons holes in alloy, well split-off energy parameters, were presented. Minimal interband Auger recombination suggested attributing off-resonance condition this process.