First-Principle Electronic Properties of Dilute-As GaNAs Alloy for Visible Light Emitters

作者: Chee-Keong Tan , Jing Zhang , Xiao-Hang Li , Guangyu Liu , Benjamin O. Tayo

DOI: 10.1109/JDT.2013.2248342

关键词:

摘要: The band structure of dilute-As GaNAs alloy with the As composition range from 0% to 12.5% is studied by using First-Principle density-functional calculation. Our analysis shows that exhibits direct gap properties. a 3.645 eV down 2.232 content varying 12.5%, which covers blue and green spectral regime. This finding indicates as potential candidate for photonic devices applications. bowing parameter 14.5 ±0.5 also obtained line fitting experimental data. effective masses electrons holes in alloy, well split-off energy parameters, were presented. Minimal interband Auger recombination suggested attributing off-resonance condition this process.

参考文章(41)
Y. C. Shen, G. O. Mueller, S. Watanabe, N. F. Gardner, A. Munkholm, M. R. Krames, Auger recombination in InGaN measured by photoluminescence Applied Physics Letters. ,vol. 91, pp. 141101- ,(2007) , 10.1063/1.2785135
I. Vurgaftman, J. R. Meyer, L. R. Ram-Mohan, Band parameters for III–V compound semiconductors and their alloys Journal of Applied Physics. ,vol. 89, pp. 5815- 5875 ,(2001) , 10.1063/1.1368156
Jinqiao Xie, Xianfeng Ni, Qian Fan, Ryoko Shimada, Ümit Özgür, Hadis Morkoç, None, On the efficiency droop in InGaN multiple quantum well blue light emitting diodes and its reduction with p-doped quantum well barriers Applied Physics Letters. ,vol. 93, pp. 121107- ,(2008) , 10.1063/1.2988324
Hongping Zhao, Ronald A. Arif, Nelson Tansu, Self-consistent gain analysis of type-II ‘W’ InGaN–GaNAs quantum well lasers Journal of Applied Physics. ,vol. 104, pp. 043104- ,(2008) , 10.1063/1.2970107
Patrick Rinke, Chris G. Van de Walle, Kris T. Delaney, Auger recombination rates in nitrides from first principles Applied Physics Letters. ,vol. 94, pp. 191109- ,(2009) , 10.1063/1.3133359
Vincenzo Fiorentini, Alfonso Baldereschi, Dielectric scaling of the self-energy scissor operator in semiconductors and insulators. Physical Review B. ,vol. 51, pp. 17196- 17198 ,(1995) , 10.1103/PHYSREVB.51.17196
A. Sugimura, Band-to-band auger effect in long wavelength multinary III-V alloy semiconductor lasers IEEE Journal of Quantum Electronics. ,vol. 18, pp. 352- 363 ,(1982) , 10.1109/JQE.1982.1071543
Katsuhiro Uesugi, Nobuki Morooka, Ikuo Suemune, Reexamination of N composition dependence of coherently grown GaNAs band gap energy with high-resolution x-ray diffraction mapping measurements Applied Physics Letters. ,vol. 74, pp. 1254- 1256 ,(1999) , 10.1063/1.123516
X. Li, S. G. Bishop, J. J. Coleman, GaN epitaxial lateral overgrowth and optical characterization Applied Physics Letters. ,vol. 73, pp. 1179- 1181 ,(1998) , 10.1063/1.122121
Min-Ho Kim, Martin F. Schubert, Qi Dai, Jong Kyu Kim, E. Fred Schubert, Joachim Piprek, Yongjo Park, Origin of efficiency droop in GaN-based light-emitting diodes Applied Physics Letters. ,vol. 91, pp. 183507- ,(2007) , 10.1063/1.2800290