Improvement in Chemical-Vapor-Deposited-SiO2Film Properties by Annealing with UV-Light-Excited Ozone
作者： Tetsuya Nishiguchi , Shigeru Saito , Naoto Kameda , Mitsuru Kekura , Hidehiko Nonaka
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摘要: Ultraviolet-enhanced, highly concentrated (>90 vol %) ozone gas annealing was carried out at 200 °C to fabricate as-deposited tetraethoxysilane chemical vapor deposited SiO2 film (TEOS-CVD films) applicable as a gate dielectric material for thin-film transistors. As result of this annealing, the leakage current density, fixed charge and constant films decreased those thermally grown silicon oxide. The relative constant, example, reduced from 5.4 4.0. films' resistance wet-etching solution also improved, particularly within region located 3–5 nm surface. In region, reduction in amount excess positive charges Si increase density an ideal Si–O bonding network were confirmed X-ray photoelectron spectroscopy measurements. These results suggest that oxygen atoms are incorporated into film, while impurities contained such OH gassed by diffusion generated photo dissociation phase. effects with without atom supply compared mechanism is discussed.
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Seong Keun Kim, Cheol Seong Hwang, Atomic-layer-deposited Al2O3 thin films with thin SiO2 layers grown by in situ O3 oxidation Journal of Applied Physics. ,vol. 96, pp. 2323- 2329 ,(2004) , 10.1063/1.1769090
Akinobu Teramoto, Kiyoteru Kobayashi, Yoshikazu Ohno, Makoto Hirayama, Highly Reliable SiO2 Films Formed by UV-O2 Oxidation Japanese Journal of Applied Physics. ,vol. 37, pp. 1122- 1124 ,(1998) , 10.1143/JJAP.37.1122
Naoto KAMEDA, Shigeru SAITO, Tetsuya NISHIGUCHI, Yoshiki MORIKAWA, Mitsuru KEKURA, Hidehiko NONAKA, Shingo ICHIMURA, Application of UV-light excited ozone to large-sized si wafer at low temperature Journal of The Vacuum Society of Japan. ,vol. 51, pp. 228- 231 ,(2008) , 10.3131/JVSJ2.51.228
Naoto Kameda, Tetsuya Nishiguchi, Yoshiki Morikawa, Mitsuru Kekura, Hidehiko Nonaka, Shingo Ichimura, Advantage of highly concentrated (≥90%) ozone for chemical vapor deposition SiO2 grown under 200 °c using hexamethyldisilazane and ultraviolet light excited ozone Japanese Journal of Applied Physics. ,vol. 48, ,(2009) , 10.1143/JJAP.48.05DB01
M. Lenzlinger, E. H. Snow, Fowler‐Nordheim Tunneling into Thermally Grown SiO2 Journal of Applied Physics. ,vol. 40, pp. 278- 283 ,(1969) , 10.1063/1.1657043
Shingo Ichimura, Hidehiko Nonaka, Yoshiki Morikawa, Tsuyoshi Noyori, Tetsuya Nishiguchi, Mitsuru Kekura, Development of a continuous generation/supply system of highly concentrated ozone gas for low-temperature oxidation process Journal of Vacuum Science and Technology. ,vol. 22, pp. 1410- 1414 ,(2004) , 10.1116/1.1705592
Tetsuya Nishiguchi, Yoshiki Morikawa, Mitsuru Kekura, Masaharu Miyamoto, Hidehiko Nonaka, Shingo Ichimura, Reactive oxygen beam generation system using pulsed laser evaporation of highly concentrated solid ozone Review of Scientific Instruments. ,vol. 73, pp. 1217- 1223 ,(2002) , 10.1063/1.1448909
Tetsuya Nishiguchi, Shigeru Saitoh, Naoto Kameda, Yoshiki Morikawa, Mitsuru Kekura, Hidehiko Nonaka, Shingo Ichimura, Rapid Oxidation of Silicon Using UV-Light Irradiation in Low-Pressure, Highly Concentrated Ozone Gas below 300 °C Japanese Journal of Applied Physics. ,vol. 46, pp. 2835- 2839 ,(2007) , 10.1143/JJAP.46.2835
Shunsuke Hosokawa, Shingo Ichimura, Ozone jet generator as an oxidizing reagent source for preparation of superconducting oxide thin film Review of Scientific Instruments. ,vol. 62, pp. 1614- 1619 ,(1991) , 10.1063/1.1142440
Ann Marie Nguyen, Properties of chemical vapor deposited tetraethylorthosilicate oxides: Correlation with deposition parameters, annealing, and hydrogen concentration Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. ,vol. 8, pp. 533- 539 ,(1990) , 10.1116/1.585015