作者: Shingo Ichimura , Hidehiko Nonaka , Yoshiki Morikawa , Tsuyoshi Noyori , Tetsuya Nishiguchi
DOI: 10.1116/1.1705592
关键词:
摘要: A system is described which can continuously generate/supply highly concentrated (HC) ozone gas to satisfy the future need for practical low-temperature oxidation. This comprises four vessels, each with independent temperature control. The supply a constant flow of HC by allocating one modes operation, i.e., accumulation/storage, vaporization (supply), evacuation, and cooling, vessels so that all be simultaneously addressed. maximum rate 60 sccm flux stability ±1.1%, an concentration over 99.5 vol % achieved at outlet. was applied formation ultrathin SiO2 film on 4 in. diameter silicon wafer substrate.