Capacitive semiconductor sensor with hinged diaphragm for planar movement

摘要: A semiconductive sensor or transducer (100), for example, a pressure utilizing capacitance variations to sense variations, of the silicon-on-silicon type, in which "hinge" (111A) form relatively thin, encircling area is provided at outer peripheral edge diaphragm, causing central region (117) diaphragm (111) move linear, non-curved planar manner (compare FIG. 2 1), providing linear response frequency output. first embodiment (FIG. 3) hinged capacitive sensor, basically cylindrical shape, has hinge formed by etching, milling machining away some thickness its edge. In second 4) etching and using glass layer control selective chemical enchant silicon but does not attack glass; while third 5) uses aluminum place glass. fourth 6) effectively on opposite side from shown embodiments FIGS. 3-5. The structure can be used other forms transducers, use relative movement with respect another substrate.