Capacitive type pressure sensor

摘要: By sealing a diaphragm with less processes and lower cost reducing deformation due to remaining stress, stable highly reliable pressure sensor construction is proposed. The low in measurement error small floating capacitance leakage current good characteristic. As means attain the above object, polycrystalline silicon sealed oxide film deposited through LPCVD method then completely covered. placed on surface of semiconductor substrate nearly constant gap 0.15 1.3 μm, has difference-in-grade constructions stress.