Nonlinear optical properties of Si nanocrystals embedded in SiO2 prepared by a cosputtering method
作者： Kenji Imakita , Masahiko Ito , Minoru Fujii , Shinji Hayashi
DOI: 10.1063/1.3125446
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摘要: Nonlinear optical properties of Si nanocrystals (Si-ncs) doped SiO2 prepared by a cosputtering method were studied z-scan technique in femtosecond regime at around 1.6 eV. The nonlinear refractive index (n2) and absorption coefficient (β) strongly enhanced compared to those bulk found be about ∼2×10−13 cm2/W ∼0.8 cm/GW, respectively. In the photon energy region from 1.48 1.65 eV, n2 β spectra followed no enhancement was observed band-edge photoluminescence region. diameter range 2.7–5.4 nm, size dependence coincided well with that calculated pseudopotential approach, suggesting discrete states Si-ncs are responsible for nonlinearity.
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