Hole doped Dirac states in silicene by biaxial tensile strain

摘要: The effects of biaxial tensile strain on the structure, electronic states, and mechanical properties silicene are studied by ab-initio calculations. Our results show that up to 5% Dirac cone remains essentially at Fermi level, while higher induces hole doping because weakening Si$-$Si bonds. We demonstrate lattice is stable 17% strain. It noted buckling first decreases with (up 10%) then increases again, which accompanied a band gap variation. also calculate Gr\"uneisen parameter dependence similar graphene.